Literature DB >> 10046595

Surface evolution during molecular-beam epitaxy deposition of GaAs.

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Abstract

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Year:  1992        PMID： 10046595     DOI： 10.1103/PhysRevLett.69.2811

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


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  1 in total

1.  Chemically specific termination control of oxide interfaces via layer-by-layer mean inner potential engineering.

Authors:  H Y Sun; Z W Mao; T W Zhang; L Han; T T Zhang; X B Cai; X Guo; Y F Li; Y P Zang; W Guo; J H Song; D X Ji; C Y Gu; C Tang; Z B Gu; N Wang; Y Zhu; D G Schlom; Y F Nie; X Q Pan
Journal:  Nat Commun       Date:  2018-07-27       Impact factor: 14.919
  1 in total

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