Literature DB >> 10043962

Direct comparison of the quantized Hall resistance in gallium arsenide and silicon.

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Abstract

Entities:  

Year:  1991        PMID： 10043962     DOI： 10.1103/PhysRevLett.66.969

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


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  6 in total

1.  Quantum Hall resistance standard in graphene devices under relaxed experimental conditions.

Authors:  R Ribeiro-Palau; F Lafont; J Brun-Picard; D Kazazis; A Michon; F Cheynis; O Couturaud; C Consejo; B Jouault; W Poirier; F Schopfer
Journal:  Nat Nanotechnol       Date:  2015-09-07       Impact factor: 39.213

2.  The Quantum Hall Effect in the Era of the New SI.

Authors:  Albert F Rigosi; Randolph E Elmquist
Journal:  Semicond Sci Technol       Date:  2019       Impact factor: 2.352

3.  Preservation of Surface Conductivity and Dielectric Loss Tangent in Large-Scale, Encapsulated Epitaxial Graphene Measured by Noncontact Microwave Cavity Perturbations.

Authors:  Albert F Rigosi; Nicholas R Glavin; Chieh-I Liu; Yanfei Yang; Jan Obrzut; Heather M Hill; Jiuning Hu; Hsin-Yen Lee; Angela R Hight Walker; Curt A Richter; Randolph E Elmquist; David B Newell
Journal:  Small       Date:  2017-05-19       Impact factor: 13.281

4.  Intrinsic Capacitances and Inductances of Quantum Hall Effect Devices.

Authors:  M E Cage; A Jeffery
Journal:  J Res Natl Inst Stand Technol       Date:  1996 Nov-Dec

Review 5.  Experimental researches on quantum transport in semiconductor two-dimensional electron systems.

Authors:  Shinji Kawaji
Journal:  Proc Jpn Acad Ser B Phys Biol Sci       Date:  2008       Impact factor: 3.493

6.  The Ampere and Electrical Standards.

Authors:  R E Elmquist; M E Cage; Y H Tang; A M Jeffery; J R Kinard; R F Dziuba; N M Oldham; E R Williams
Journal:  J Res Natl Inst Stand Technol       Date:  2001-02-01
  6 in total

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