Literature DB >> 10043186

Well-resolved band-edge photoluminescence of excitons confined in strained Si1-xGex quantum wells.

.   

Abstract

Year:  1991        PMID： 10043186     DOI： 10.1103/PhysRevLett.66.1362

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


× No keyword cloud information.
  3 in total

1.  The investigation of selective pre-pattern free self-assembled Ge nano-dot formed by excimer laser annealing.

Authors:  Min-Hung Lee; Pin-Guang Chen
Journal:  Nanoscale Res Lett       Date:  2012-06-18       Impact factor: 4.703

2.  Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots.

Authors:  Jian Cui; Jian Hui Lin; Yue Qin Wu; Yong Liang Fan; Zhenyang Zhong; Xin Ju Yang; Zui Min Jiang
Journal:  Nanoscale Res Lett       Date:  2010-10-02       Impact factor: 4.703

3.  Temperature-dependent photoluminescence in light-emitting diodes.

Authors:  Taiping Lu; Ziguang Ma; Chunhua Du; Yutao Fang; Haiyan Wu; Yang Jiang; Lu Wang; Longgui Dai; Haiqiang Jia; Wuming Liu; Hong Chen
Journal:  Sci Rep       Date:  2014-08-20       Impact factor: 4.379
  3 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.