Literature DB >> 10042924

Reconstructions of GaAs(1-bar 1-bar 1-bar) surfaces observed by scanning tunneling microscopy.

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Abstract

Year:  1990        PMID： 10042924     DOI： 10.1103/PhysRevLett.65.452

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


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  3 in total

1.  Atomic structure and passivated nature of the Se-treated GaAs(111)B surface.

Authors:  Akihiro Ohtake; Shunji Goto; Jun Nakamura
Journal:  Sci Rep       Date:  2018-01-19       Impact factor: 4.379

Review 2.  Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach.

Authors:  Yoshihiro Kangawa; Toru Akiyama; Tomonori Ito; Kenji Shiraishi; Takashi Nakayama
Journal:  Materials (Basel)       Date:  2013-08-06       Impact factor: 3.623

3.  Real-Time Characterization Using in situ RHEED Transmission Mode and TEM for Investigation of the Growth Behaviour of Nanomaterials.

Authors:  Janghyun Jo; Youngbin Tchoe; Gyu-Chul Yi; Miyoung Kim
Journal:  Sci Rep       Date:  2018-01-26       Impact factor: 4.379
  3 in total

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