Literature DB >> 10042580

First observation of paramagnetic nitrogen dangling-bond centers in silicon nitride.

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Abstract

Entities:  

Year:  1990        PMID： 10042580     DOI： 10.1103/PhysRevLett.65.207

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


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  1 in total

1.  On the influence of interface charging dynamics and stressing conditions in strained silicon devices.

Authors:  Irene Olivares; Todora Angelova; Pablo Sanchis
Journal:  Sci Rep       Date:  2017-08-03       Impact factor: 4.379
  1 in total

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