Literature DB >> 10042207

Limiting thickness hepi for epitaxial growth and room-temperature Si growth on Si(100).

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Abstract

Entities:  

Year:  1990        PMID： 10042207     DOI： 10.1103/PhysRevLett.65.1227

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


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  2 in total

1.  Silicon epitaxy on H-terminated Si (100) surfaces at 250 °C.

Authors:  Xiao Deng; Pradeep Namboodiri; Kai Li; Xiqiao Wang; Gheorghe Stan; Alline F Myers; Xinbin Cheng; Tongbao Li; Richard M Silver
Journal:  Appl Surf Sci       Date:  2016-03-31       Impact factor: 6.707

2.  Microscopic Study of the Spinodal Decomposition of Supported Eutectic Droplets During Cooling: PtGe/Ge{110}.

Authors:  Zhiguo Zhang; Bene Poelsema; Harold J W Zandvliet; Arie van Houselt
Journal:  J Phys Chem C Nanomater Interfaces       Date:  2022-06-30       Impact factor: 4.177
  2 in total

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