Literature DB >> 10041674

Mechanism of internal gettering of interstitial impurities in Czochralski-grown silicon.

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Abstract

Entities:  

Year:  1990        PMID： 10041674     DOI： 10.1103/PhysRevLett.64.196

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


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  1 in total

1.  Proximity Gettering Design of Hydrocarbon⁻Molecular⁻Ion⁻Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors.

Authors:  Kazunari Kurita; Takeshi Kadono; Satoshi Shigematsu; Ryo Hirose; Ryosuke Okuyama; Ayumi Onaka-Masada; Hidehiko Okuda; Yoshihiro Koga
Journal:  Sensors (Basel)       Date:  2019-05-04       Impact factor: 3.576
  1 in total

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