Literature DB >> 10041534

Dislocation-free Stranski-Krastanow growth of Ge on Si(100).

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Abstract

Year:  1990        PMID： 10041534     DOI： 10.1103/PhysRevLett.64.1943

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


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  18 in total

1.  Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon.

Authors:  G Katsaros; P Spathis; M Stoffel; F Fournel; M Mongillo; V Bouchiat; F Lefloch; A Rastelli; O G Schmidt; S De Franceschi
Journal:  Nat Nanotechnol       Date:  2010-05-02       Impact factor: 39.213

2.  Atomic-scale mapping of quantum dots formed by droplet epitaxy.

Authors:  Divine P Kumah; Sergey Shusterman; Yossi Paltiel; Yizhak Yacoby; Roy Clarke
Journal:  Nat Nanotechnol       Date:  2009-09-27       Impact factor: 39.213

3.  Quantum dots: one atom at a time.

Authors:  Hanno H Weitering
Journal:  Nat Nanotechnol       Date:  2014-06-29       Impact factor: 39.213

4.  Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography.

Authors:  F Pezzoli; M Stoffel; T Merdzhanova; A Rastelli; Og Schmidt
Journal:  Nanoscale Res Lett       Date:  2009-06-06       Impact factor: 4.703

5.  Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands.

Authors:  M Brehm; M Grydlik; F Hackl; E Lausecker; T Fromherz; G Bauer
Journal:  Nanoscale Res Lett       Date:  2010-08-05       Impact factor: 4.703

6.  Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001).

Authors:  R Bergamaschini; F Montalenti; L Miglio
Journal:  Nanoscale Res Lett       Date:  2010-08-06       Impact factor: 4.703

7.  Misfit-guided self-organization of anticorrelated Ge quantum dot arrays on Si nanowires.

Authors:  Soonshin Kwon; Zack C Y Chen; Ji-Hun Kim; Jie Xiang
Journal:  Nano Lett       Date:  2012-08-16       Impact factor: 11.189

8.  The investigation of selective pre-pattern free self-assembled Ge nano-dot formed by excimer laser annealing.

Authors:  Min-Hung Lee; Pin-Guang Chen
Journal:  Nanoscale Res Lett       Date:  2012-06-18       Impact factor: 4.703

9.  Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C.

Authors:  Mikhail S Storozhevykh; Larisa V Arapkina; Vladimir A Yuryev
Journal:  Nanoscale Res Lett       Date:  2015-07-16       Impact factor: 4.703

10.  Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays.

Authors:  Hyun Wook Shin; Sang Jun Lee; Doo Gun Kim; Myung-Ho Bae; Jaeyeong Heo; Kyoung Jin Choi; Won Jun Choi; Jeong-woo Choe; Jae Cheol Shin
Journal:  Sci Rep       Date:  2015-06-02       Impact factor: 4.379
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