Literature DB >> 10040487

Electronic structure and Schottky-barrier heights of (111) NiSi2/Si A- and B-type interfaces.

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Abstract

Entities:  

Year:  1989        PMID: 10040487     DOI: 10.1103/PhysRevLett.63.1168

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


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  1 in total

1.  Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge.

Authors:  Hongfei Li; Yuzheng Guo; John Robertson
Journal:  Sci Rep       Date:  2017-11-30       Impact factor: 4.379

  1 in total

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