Literature DB >> 10039055

Defects and impurities at the Si/Si(100) interface studied with monoenergetic positrons.

.   

Abstract

Entities:  

Year:  1988        PMID： 10039055     DOI： 10.1103/PhysRevLett.61.187

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


× No keyword cloud information.
  2 in total

1.  Study of Edge and Screw Dislocation Density in GaN/Al2O3 Heterostructure.

Authors:  Vladimir Lucian Ene; Doru Dinescu; Iulia Zai; Nikolay Djourelov; Bogdan Stefan Vasile; Andreea Bianca Serban; Victor Leca; Ecaterina Andronescu
Journal:  Materials (Basel)       Date:  2019-12-14       Impact factor: 3.623

2.  Defect Structure Determination of GaN Films in GaN/AlN/Si Heterostructures by HR-TEM, XRD, and Slow Positrons Experiments.

Authors:  Vladimir Lucian Ene; Doru Dinescu; Nikolay Djourelov; Iulia Zai; Bogdan Stefan Vasile; Andreea Bianca Serban; Victor Leca; Ecaterina Andronescu
Journal:  Nanomaterials (Basel)       Date:  2020-01-23       Impact factor: 5.076
  2 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.