Literature DB >> 10038752

Annealing of heavily arsenic-doped silicon: Electrical deactivation and a new defect complex.

.   

Abstract

Entities:  

Year:  1988        PMID： 10038752     DOI： 10.1103/PhysRevLett.61.1282

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


× No keyword cloud information.
  1 in total

Review 1.  Binary Phase Diagrams and Thermodynamic Properties of Silicon and Essential Doping Elements (Al, As, B, Bi, Ga, In, N, P, Sb and Tl).

Authors:  Ahmad Mostafa; Mamoun Medraj
Journal:  Materials (Basel)       Date:  2017-06-20       Impact factor: 3.623
  1 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.