Literature DB >> 10038009

Indirect-direct anticrossing in GaAs-AlAs superlattices induced by an electric field: Evidence of Gamma -X mixing.

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Abstract

Entities:  

Year:  1988        PMID： 10038009     DOI： 10.1103/PhysRevLett.60.1338

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


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  1 in total

1.  Evidence of type-II band alignment in III-nitride semiconductors: experimental and theoretical investigation for In 0.17 Al 0.83 N/GaN heterostructures.

Authors:  Jiaming Wang; Fujun Xu; Xia Zhang; Wei An; Xin-Zheng Li; Jie Song; Weikun Ge; Guangshan Tian; Jing Lu; Xinqiang Wang; Ning Tang; Zhijian Yang; Wei Li; Weiying Wang; Peng Jin; Yonghai Chen; Bo Shen
Journal:  Sci Rep       Date:  2014-10-06       Impact factor: 4.379
  1 in total

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