Literature DB >> 10034383

Role of virtual gap states and defects in metal-semiconductor contacts.

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Abstract

Entities:  

Year:  1987        PMID： 10034383     DOI： 10.1103/PhysRevLett.58.1260

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


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  5 in total

1.  General Considerations for Improving Photovoltage in Metal-Insulator-Semiconductor Photoanodes.

Authors:  Ibadillah A Digdaya; Bartek J Trześniewski; Gede W P Adhyaksa; Erik C Garnett; Wilson A Smith
Journal:  J Phys Chem C Nanomater Interfaces       Date:  2018-02-07       Impact factor: 4.126

Review 2.  Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices.

Authors:  Shojan P Pavunny; James F Scott; Ram S Katiyar
Journal:  Materials (Basel)       Date:  2014-03-31       Impact factor: 3.623

3.  Understanding contact electrification at liquid-solid interfaces from surface electronic structure.

Authors:  Mingzi Sun; Qiuyang Lu; Zhong Lin Wang; Bolong Huang
Journal:  Nat Commun       Date:  2021-03-19       Impact factor: 14.919

4.  Reduced Fermi Level Pinning at Physisorptive Sites of Moire-MoS2/Metal Schottky Barriers.

Authors:  Zhaofu Zhang; Yuzheng Guo; John Robertson
Journal:  ACS Appl Mater Interfaces       Date:  2022-02-27       Impact factor: 10.383

5.  Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge.

Authors:  Hongfei Li; Yuzheng Guo; John Robertson
Journal:  Sci Rep       Date:  2017-11-30       Impact factor: 4.379
  5 in total

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