Literature DB >> 10032113

High-temperature SiO2 decomposition at the SiO2/Si interface.

.   

Abstract

Entities:  

Year:  1985        PMID: 10032113     DOI: 10.1103/PhysRevLett.55.2332

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


× No keyword cloud information.
  4 in total

1.  Evaluation of GeO desorption behavior in the metalGeO(2)Ge structure and its improvement of the electrical characteristics.

Authors:  Yusuke Oniki; Hideo Koumo; Yoshitaka Iwazaki; Tomo Ueno
Journal:  J Appl Phys       Date:  2010-06-25       Impact factor: 2.546

2.  Growth of GeSi nanoislands on nanotip-patterned Si (100) substrates with a stress-induced self-limiting interdiffusion.

Authors:  Ruifan Tang; Kai Huang; Hongkai Lai; Cheng Li; Zhiming Wu; Junyong Kang
Journal:  Nanoscale Res Lett       Date:  2012-06-26       Impact factor: 4.703

3.  Self-Heating and Failure in Scalable Graphene Devices.

Authors:  Thomas E Beechem; Ryan A Shaffer; John Nogan; Taisuke Ohta; Allister B Hamilton; Anthony E McDonald; Stephen W Howell
Journal:  Sci Rep       Date:  2016-06-09       Impact factor: 4.379

4.  Chemical and kinetic insights into the Thermal Decomposition of an Oxide Layer on Si(111) from Millisecond Photoelectron Spectroscopy.

Authors:  J-J Gallet; M G Silly; M El Kazzi; F Bournel; F Sirotti; F Rochet
Journal:  Sci Rep       Date:  2017-10-27       Impact factor: 4.379

  4 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.