Literature DB >> 10031788

Electronic structure, total energies, and abundances of the elementary point defedts in GaAs.

.   

Abstract

Year:  1985        PMID： 10031788     DOI： 10.1103/PhysRevLett.55.1327

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


× No keyword cloud information.
  2 in total

1.  Room-temperature defect-engineered spin filter based on a non-magnetic semiconductor.

Authors:  X J Wang; I A Buyanova; F Zhao; D Lagarde; A Balocchi; X Marie; C W Tu; J C Harmand; W M Chen
Journal:  Nat Mater       Date:  2009-02-15       Impact factor: 43.841

2.  The electronic properties of impurities (N, C, F, Cl, and S) in Ag3PO4: A hybrid functional method study.

Authors:  Yang Huang; Tai Ma; Qing-yuan Chen; Chao Cao; Yao He
Journal:  Sci Rep       Date:  2015-08-03       Impact factor: 4.379
  2 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.